Abstract

Semiconducting Zinc sulphide (ZnS) thin filmwas deposited on glass substrate usingchemical spray pyrolysis technique.The suitable deposition temperature was 400 ±3°C, and the thickness of the films was found to be 420 ±5nm. The X-ray diffraction (XRD) analysis showed that the film was polycrystalline with grain size of crystallite 16 nm. The electrical properties were studied for prepared film, and the results showed a linear behaviour of I-V characteristics at the voltage range of 30 -100 V. Resistivity of ZnS sample decreases with temperature, and found to be 9.91 x 10² Ω cm at room temperature while the conductivity was 1.01 x 10^-3 Ω^-1 cm^-1. The activation energies were found to be temperature dependent and showed two values 0.21(eV) for temperature range (293-453)K and 0.233(eV) for temperature range (463-513 )K. Hall coefficient (RH) was calculated, its value pointed that the films was n-type, and the carrier concentration was estimated as 4.21 x 10¹³ Ω (1/cm³) , while the mobility was 149 (cm²/V.s).